Part Number Hot Search : 
0150CT BR3510 5943C LBGA256 RRCMCH86 MZ724 UR3060 BR3510
Product Description
Full Text Search

GT50G321 - TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT50G321_1246402.PDF Datasheet

 
Part No. GT50G321
Description TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

File Size 285.56K  /  6 Page  

Maker

TOSHIBA[Toshiba Semiconductor]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: GT50J101
Maker: TOSHIBA(东芝)
Pack: TO-3PL
Stock: 216
Unit price for :
    50: $2.71
  100: $2.58
1000: $2.44

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ GT50G321 Datasheet PDF Downlaod from Datasheet.HK ]
[GT50G321 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for GT50G321 ]

[ Price & Availability of GT50G321 by FindChips.com ]

 Full text search : TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT


 Related Part Number
PART Description Maker
GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
IRGP420U GP420U Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)
International Rectifier, Corp.
IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
IRG4BC29F IRG4BC30F IRG4BC30 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)
IRF[International Rectifier]
International Rectifier, Corp.
CT90AM-18 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30K 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
MGP15N60U-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MMG05N60D-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
IRGS4045DPBF IRGS4045DPDF IRGS4045DTRLPBF IRGS4045 INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
2PG353 Insulated Gate Bipolar Transistor
Panasonic
 
 Related keyword From Full Text Search System
GT50G321 standard GT50G321 Temperature GT50G321 command GT50G321 ICPRICE GT50G321 Stmicroelectronic
GT50G321 Transistors GT50G321 specification GT50G321 upload GT50G321 signal GT50G321 查询
 

 

Price & Availability of GT50G321

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.67167997360229